Prediction of MOS matching in weak and moderate inversion from threshold matching in strong inversion

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 648-651

  Denison, M ^a   Pergoot, A ^a   Tack, M ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT MATCHING; M-TECHNOLOGIES; MODERATE INVERSION; SHORT-CHANNEL EFFECT; SIMPLE MODELING; STRONG INVERSION; TRANSCONDUCTANCE-TO-CURRENT RATIO;

THRESHOLD VOLTAGE;

EID: 78049286464     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Ming-Jer Chen et al, IEEE Transactions on Electron Devices, Vol 43, nOS, 1996, pp. 766-773.
2. F. Forti et ai, IEEE J. Solid-State Circuits, Vol 29, nO 2, 1994, pp. 138-142.
3. J. Bastos et ai Analog Integrated Circuits and Signal Processing no 12 1997, 96-106.
4. M. J. M. Pelgrom et ai, IEEE J. Solid-State Circuits, SC- 24, 1989, pp. l433-1439.
5. A. C. Bajpai et ai, Numerical Methods for Engineers and Scientists, Taylor and Francis, London, 1975.