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Volumn 81, Issue 19, 2010, Pages

Spin dynamics of electrons and holes in InGaAs/GaAs quantum wells at millikelvin temperatures

Author keywords

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Indexed keywords


EID: 77955632243     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.195304     Document Type: Article
Times cited : (27)

References (24)
  • 1
    • 47949098533 scopus 로고    scopus 로고
    • edited by M. I. Dyakonov (Springer-Verlag, Berlin, 10.1007/978-3-540- 78820-1
    • Spin Physics in Semiconductors, edited by, M. I. Dyakonov, (Springer-Verlag, Berlin, 2008). 10.1007/978-3-540-78820-1
    • (2008) Spin Physics in Semiconductors
  • 2
    • 0003562493 scopus 로고    scopus 로고
    • edited by D. D. Awschalom, D. Loss, and N. Samarth (Springer-Verlag, Berlin
    • Semiconductor Spintronics and Quantum Computation, edited by, D. D. Awschalom, D. Loss, and, N. Samarth, (Springer-Verlag, Berlin, 2002).
    • (2002) Semiconductor Spintronics and Quantum Computation
  • 3
    • 68949093795 scopus 로고    scopus 로고
    • edited by F. Henneberger and O. Benson (Pan Stanford, Singapore
    • Semiconductor Quantum Bits, edited by, F. Henneberger, and, O. Benson, (Pan Stanford, Singapore, 2009).
    • (2009) Semiconductor Quantum Bits
  • 15
    • 77955643571 scopus 로고    scopus 로고
    • T. Korn, M. Kugler, M. Griesbeck, R. Schulz, A. Wagner, M. Kubova, C. Gerl, D. Schuh, W. Wegscheider, and C. Schüller, arXiv:0909.3711 (unpublished)
    • T. Korn, M. Kugler, M. Griesbeck, R. Schulz, A. Wagner, M. Kubova, C. Gerl, D. Schuh, W. Wegscheider, and C. Schüller, arXiv:0909.3711 (unpublished).
  • 19
    • 77955637368 scopus 로고    scopus 로고
    • The inhomogeneous broadening of exciton and trion resonances caused by the localization of charge carriers and their complexes on quantum well structure imperfections can be taken into account by convolution of Eq. with the proper distribution of resonant frequencies. Effectively, such an averaging leads to an increase in the constants Γi describing nonradiative damping. Introduction of two independent parameters for each resonance: one describing the nonradiative damping and other describing inhomogeneous broadening for, e.g., Gaussian distribution of resonance energies, leads to even better agreement between line shapes in experiment and theory, however, we decided to keep the smallest possible fitting parameters which allow to obtain the agreement
    • The inhomogeneous broadening of exciton and trion resonances caused by the localization of charge carriers and their complexes on quantum well structure imperfections can be taken into account by convolution of Eq. with the proper distribution of resonant frequencies. Effectively, such an averaging leads to an increase in the constants Γ i describing nonradiative damping. Introduction of two independent parameters for each resonance: one describing the nonradiative damping and other describing inhomogeneous broadening for, e.g., Gaussian distribution of resonance energies, leads to even better agreement between line shapes in experiment and theory, however, we decided to keep the smallest possible fitting parameters which allow to obtain the agreement.
  • 23
    • 77955651415 scopus 로고    scopus 로고
    • In Eqs. (5) and (6) of Ref. factor exp (- TR / Tse ) and minus at last term of denominator were lost
    • In Eqs. (5) and (6) of Ref. factor exp (- T R / T s e) and minus at last term of denominator were lost.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.