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The inhomogeneous broadening of exciton and trion resonances caused by the localization of charge carriers and their complexes on quantum well structure imperfections can be taken into account by convolution of Eq. with the proper distribution of resonant frequencies. Effectively, such an averaging leads to an increase in the constants Γi describing nonradiative damping. Introduction of two independent parameters for each resonance: one describing the nonradiative damping and other describing inhomogeneous broadening for, e.g., Gaussian distribution of resonance energies, leads to even better agreement between line shapes in experiment and theory, however, we decided to keep the smallest possible fitting parameters which allow to obtain the agreement
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The inhomogeneous broadening of exciton and trion resonances caused by the localization of charge carriers and their complexes on quantum well structure imperfections can be taken into account by convolution of Eq. with the proper distribution of resonant frequencies. Effectively, such an averaging leads to an increase in the constants Γ i describing nonradiative damping. Introduction of two independent parameters for each resonance: one describing the nonradiative damping and other describing inhomogeneous broadening for, e.g., Gaussian distribution of resonance energies, leads to even better agreement between line shapes in experiment and theory, however, we decided to keep the smallest possible fitting parameters which allow to obtain the agreement.
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In Eqs. (5) and (6) of Ref. factor exp (- TR / Tse ) and minus at last term of denominator were lost
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