Long-term hole spin memory in the resonantly amplified spin coherence of InGaAs/GaAs quantum well electrons

Physical Review Letters

Volumn 102, Issue 16, 2009, Pages

  Yugova, I A ^a,b   Sokolova, A A ^b   Yakovlev, D R ^a,c   Greilich, A ^a   Reuter, D ^d   Wieck, A D ^d   Bayer, M ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SPIN COHERENCES; HOLE SPINS; INGAAS/GAAS; MAGNETIC FIELD DISPERSIONS; N-DOPED; ORDERS OF MAGNITUDES; PULSED OPTICAL EXCITATIONS; QUANTUM WELLS; SHAPE INFORMATIONS; SPIN COHERENCES; SPIN RELAXATIONS;

AMPLIFICATION; ELECTRONS; GALLIUM; MAGNETIC FIELDS; PHOTOEXCITATION; SEMICONDUCTOR QUANTUM WELLS;

SPIN DYNAMICS;

EID: 65549170461     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.167402     Document Type: Article

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