Electron-spin dephasing in GaAs Al0.34 Ga0.66 As quantum wells with a gate-controlled electron density

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 11, 2007, Pages

  Gerlovin, I Ya ^a   Efimov, Yu P ^a   Dolgikh, Yu K ^a   Eliseev, S A ^a   Ovsyankin, V V ^a   Petrov, V V ^a   Cherbunin, R V ^a,b   Ignatiev, I V ^a,b   Yugova, I A ^a,b   Fokina, L V ^b   Greilich, A ^b   Yakovlev, D R ^b,c   Bayer, M ^b  

^a ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^b TU DORTMUND UNIVERSITY   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34047182601     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.115330     Document Type: Article

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