Properties of Bi2O3 thin films prepared via a modified Pechini route

Current Applied Physics

Volumn 10, Issue 6, 2010, Pages 1372-1377

  Soitah, Timonah N ^a,b   Chunhui, Yang ^a   Yong, Yu ^a   Yinghua, Niu ^a   Liang, Sun ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b JOMO KENYATTA UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Kenya)

Author keywords

Bismuth oxide thin film; Optical and electrical properties; Pechini method; Photocatalysis; Structural

Indexed keywords

AFM; ANNEALING TEMPERATURES; BISMUTH NITRATES; BISMUTH OXIDE THIN FILMS; BISMUTH OXIDES; DIRECT BAND GAP; ELECTRICAL MEASUREMENT; ELECTRICAL RESISTIVITY; GLASS SUBSTRATES; METHYL ORANGE; OPTICAL ABSORPTION; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL STUDY; PECHINI; PECHINI METHOD; PHOTOCATALYTIC PERFORMANCE; POLYCRYSTALLINE; SEM; SEM IMAGE; STRUCTURAL INVESTIGATION;

ANNEALING; ATOMIC FORCE MICROSCOPY; AZO DYES; BISMUTH; ELECTRIC CONDUCTIVITY; FILM PREPARATION; OPTICAL PROPERTIES; OXIDE FILMS; PHOTOCATALYSIS; PHOTODEGRADATION; SCANNING ELECTRON MICROSCOPY; STRUCTURAL PROPERTIES; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

OPTICAL FILMS;

EID: 77955558029     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.04.006     Document Type: Article

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