Growth of the high reflectivity Bi2O3 glass films by atmospheric pressure halide CVD

Optical Materials

Volumn 26, Issue 4, 2004, Pages 413-415

  Takeyama, T ^a   Takahashi, N ^a   Nakamura, T ^a   Ito, S ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b ASAHI GLASS CO LTD   (Japan)

Author keywords

Atmospheric pressure; Bismuth oxide; CVD; Glass; Thin film

Indexed keywords

AMORPHOUS MATERIALS; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES; FILM GROWTH; HALIDE MINERALS; METAL INSULATOR BOUNDARIES; MOS CAPACITORS; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SUBSTRATES;

DIELECTRIC CHARACTERISTICS; GLASS FILMS; METAL/INSULATOR/SEMICONDUCTOR (MIS) CAPACITORS; POLARIZABILITY;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 4043050070     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2003.12.021     Document Type: Conference Paper

References (13)

1. Schuisky M., Hasta A. J. Electrochem. Soc. 145(12):1998;4234.
2. Barreca D., Rizzi G.A., Tondello E. Thin Solid Films. 333:1998;35.
3. George J., Pradeep B., Joseph K.S. Thin Solid Films. 148:1987;181.
4. Barreca D., Morazzoni F., Rizzi G.A., Scotti R., Tondello E. Phys. Chem. Chem. Phys. 3:2001;1743.
5. Tanabe S., Sugimoto N., Ito S., Hanada T. J. Lumin. 87:2000;670.
6. Tanabe S. Mater. Int. 13(9):2000;39.
7. Kaiya K., Omichi K., Takahashi N., Nakamura T., Okamoto S., Yamamoto H. Thin Solid Films. 409:2002;116.
8. Takahashi N., Hosogi M., Nakamura T., Momose Y., Nonaka S., Yagi H., Shinriki Y., Tamanuki K. J. Mater. Chem. 12:2002;719.
9. Takahashi N., Makino M., Nakamura T., Yamamoto H. Chem. Mater. 14:2002;3622.
10. JCPDS File NO. 10-0445, 1990.
11. JCPDS File NO. 27-0052, 1990.
12. CPDS File NO. 41-1449, 1990.
13. JCPDS File NO. 27-0050, 1990.