Mixed mode modeling and characterization of a 4H-SiC power DMOSFET based DC-DC power converter

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 1163-1166

  Potbhare, Siddharth ^a   Goldsman, Neil ^a   Akturk, Akin ^a   Lelis, Aivars ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

4H SiC dmosfet; DC DC converter; Inductive load; Mixed mode modeling; Switching characteristics

Indexed keywords

ELECTRIC INVERTERS; ELECTRIC LOSSES; MOSFET DEVICES; SILICON CARBIDE;

DC-DC BOOST CONVERTERS; DMOSFET; INDUCTIVE LOADS; MIXED MODE SIMULATION; MIXED-MODE DEVICE SIMULATION; MIXED-MODE MODELS; PHYSICS-BASED MODELS; SWITCHING CHARACTERISTICS;

DC-DC CONVERTERS;

EID: 77955443021     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.1163     Document Type: Conference Paper

References (3)

1. B. J. Baliga, IEEE Elec. Dev. Letters, vol. 10 (1989), p. 455 doi:10.1109/55.43098.
2. S. Potbhare, N. Goldsman, et al., IEEE Trans. on Electron Devices, vol. 55 (2008), p.2029 doi:10.1109/TED.2008.926665.
3. S. Potbhare, N. Goldsman, J. Suehle, et al., IEEE Trans. on Electron Devices, vol. 55 (2008), p. 2061 doi:10.1109/TED.2008.926668.