Uniformity of epitaxial graphene on on-axis and off-axis SiC probed by raman spectroscopy and nanoscale current mapping

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 607-610

  Sonde, S ^a,b   Giannazzo, F ^a   Huntzinger, J R ^c   Tiberj, A ^c   Syvajarvi M ^d   Yakimova, R ^d   Raineri, V ^a   Camassel, J ^c  

^a CNR IMM   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

^c CNRS   (France)

^d LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Graphene uniformity; Micro Raman spectroscopy; Torsion resonance conductive atomic force microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; GRAPHENE; MORPHOLOGY; RAMAN SPECTROSCOPY; TORSIONAL STRESS;

CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT MAPPING; EPITAXIAL GRAPHENE; HIGH TEMPERATURE; LATERAL RESOLUTION; MICRO RAMAN SPECTROSCOPY; SUBMICROMETERS; UNIFORM COVERAGE;

SILICON CARBIDE;

EID: 77955437648     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.607     Document Type: Conference Paper

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