The benefits and current progress of SiC SGTOs for pulsed power applications

Solid-State Electronics

Volumn 54, Issue 10, 2010, Pages 1232-1237

  Ogunniyi, Aderinto ^a   O'Brien, Heather ^a   Lelis, Aivars ^a   Scozzie, Charles ^a   Shaheen, William ^b   Agarwal, Anant ^c   Zhang, Jon ^c   Callanan, Robert ^c   Temple, Victor ^d  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Berkeley Research Associates   (United States)

^c Arkansas Power Electronics International Inc   (United States)

^d Silicon Power Corp   (United States)

Author keywords

Basal plane dislocation; Carrier lifetime; Micropipe; Pulsed power; SiC GTOs

Indexed keywords

ACTIVE AREA; ARMY RESEARCH LABORATORIES; BASAL PLANE DISLOCATION; BASAL PLANE DISLOCATIONS; BLOCKING CAPABILITY; CHIP SIZES; FORWARD BLOCKING VOLTAGE; GATE TURN-OFF THYRISTORS; MICROPIPES; MILLISECOND PULSE WIDTH; NEGATIVE PULSE; PEAK CURRENTS; PHYSICAL CHARACTERISTICS; PULSE WIDTH; PULSED POWER APPLICATIONS; PULSED-POWER; SEMICONDUCTOR POWER DEVICES;

CARRIER LIFETIME; ELECTRIC SWITCHGEAR; RESEARCH LABORATORIES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955415808     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.05.018     Document Type: Article

References (8)

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