Calculation of threshold voltage for phase-change memory device

Journal of Non-Crystalline Solids

Volumn 353, Issue 26, 2007, Pages 2591-2594

  Voronkov, E ^a  

^a MOSCOW POWER ENGINEERING INSTITUTE   (Russian Federation)

Author keywords

Amorphous semiconductors; Conductivity; Devices

Indexed keywords

AMORPHOUS SEMICONDUCTORS; DATA ACQUISITION; ELECTRIC CONDUCTIVITY; ELECTRODES; PHASE CHANGE MEMORY; RANDOM ACCESS STORAGE;

ACTIVE REGION; CONDUCTIVE CHANNEL; EXPERIMENTAL DATA;

THRESHOLD VOLTAGE;

EID: 34250782243     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.04.028     Document Type: Article

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