Electronic structure and volume effect on thermoelectric transport in p -type Bi and Sb tellurides

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 15, 2010, Pages

  Park, Min Sik ^a   Song, Jung Hwan ^b   Medvedeva, Julia E ^a   Kim, Miyoung ^c   Kim, In Gee ^d   Freeman, Arthur J ^b  

^a MISSOURI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

^c Ajou University   (South Korea)

^d Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77955344262     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.155211     Document Type: Article

References (29)

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28. In the fixed structure, the calculated S is smaller than that of Bi 2 Te 3 with a ave / cave due to the volume effect.
29. In Fig., we can also see the similar behavior, where S of (Bi 0.5 Sb 0.5) 2 Te 3 showing the large atomic relaxation is smaller than that of Sb 2 Te 3 at the same carrier density, even though the volume of (Bi 0.5 Sb 0.5) 2 Te 3 is larger than that of Sb 2 Te 3.