Control of the figure of merit by the anti-site defect in thermoelectric materials (Bi,Sb)2Te3

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 A, 2003, Pages 5477-5479

  Iwasaki, Hideo ^a   Ohishi, Akihiro ^a   Kajihara, Takeshi ^b   Sano, Seijirou ^a,b  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b KOMATSU LTD   (Japan)

Author keywords

(Bi,Sb)2Te3; Anti site defect; Figure of merit; Harman method

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC FIELD EFFECTS; HALL EFFECT; HOLE MOBILITY; PLASMA APPLICATIONS; SEMICONDUCTING ANTIMONY COMPOUNDS; SYNTHESIS (CHEMICAL); TEMPERATURE; THERMOELECTRICITY;

ANTI-SITE DEFECT; FIGURE OF MERIT; HALL COEFFICIENT; HOLE CARRIERS; SEEBECK COEFFICIENT; SPARK PLASMA SINTERING METHOD; THERMOELECTRIC MATERIALS;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 0344063447     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5477     Document Type: Article

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