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Volumn 42, Issue 8, 2010, Pages 2109-2114

Uniaxial strain on gapped graphene

Author keywords

Gap; Graphene; Kekul; Strain

Indexed keywords

BAND-GAP LOCATION; BRILLOUIN ZONES; CONTACT POINTS; CRITICAL VALUE; DIRAC FERMIONS; EFFECT OF STRAIN; ELECTRONIC BAND STRUCTURE; GAP; HONEYCOMB LATTICES; NUMERICAL RESULTS; SUB-LATTICES; TIGHT BINDING; UNI-AXIAL STRAINS;

EID: 77955303714     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.04.007     Document Type: Article
Times cited : (10)

References (27)
  • 24
    • 77955309097 scopus 로고    scopus 로고
    • note
    • We have limited our discussion to the case of enhancement of the magnitude of hopping. One difference is that when the hopping is reduced the Dirac points move in the opposite direction away from the M point, which can be shown by making additional band plots along a different path. However, the main reason to choose enhancement over reduction, is that in the latter the hopping vanishes before the Dirac points can merge and, therefore, this critical region cannot be reached. In real experiments, of course, there are even more severe limitations on how much strain can change the hoppings.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.