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Volumn 81, Issue 12, 2010, Pages

N-type doping via avoiding the stabilization of DX centers in InP quantum dots

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EID: 77955138873     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.121307     Document Type: Article
Times cited : (6)

References (19)
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    • Pseudopotential-density functional method applied to nanostructures
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    • Our results show that there is also some deformation of occupied states with valence-band character, so the electronic energy gain during the defect formation is not strictly that given by the impurity donor state.
    • Our results show that there is also some deformation of occupied states with valence-band character, so the electronic energy gain during the defect formation is not strictly that given by the impurity donor state.


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