Ab initio calculations for p-type doped bulk indium phosphide

Solid State Communications

Volumn 146, Issue 5-6, 2008, Pages 245-248

  Alemany, M M G ^a   Huang, Xiangyang ^b   Tiago, Murilo L ^c   Gallego, L J ^a   Chelikowsky, James R ^c  

^a UNIVERSITY OF SANTIAGO DE COMPOSTELA   (Spain)

^b UNIVERSITY OF MINNESOTA   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

A. Semiconductors; C. Impurities in semiconductors; D: Electronic states

Indexed keywords

BINDING ENERGY; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC STATES; IMPURITIES; WAVE FUNCTIONS;

AB INITIO CALCULATIONS; BULK LIMITS; HYBRIDIZATION;

INDIUM PHOSPHIDE;

EID: 41249083436     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.02.019     Document Type: Article

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