Improvement of TMR effect of MTJ films with very thin MgO barrier sputtered by Ar-Ne gas mixture at low RA product below 1.0 ωμm 2

IEEE Transactions on Magnetics

Volumn 44, Issue 11 PART 2, 2008, Pages 3572-3575

  Noma, Kenji ^a   Komagaki, Koujiro ^a   Sunaga, Kazuyuki ^a   Kanai, Hitoshi ^a   Uehara, Yuji ^a   Umehara, Toshio ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Magnetic tunnel junction (MTJ); Sputter deposition; Sputtering gas; Tunneling magnetoresistance (MR)

Indexed keywords

CHEMICAL ELEMENTS; ENERGY TRANSFER; GAS MIXTURES; GASES; MAGNESIA; MAGNETIC DEVICES; OXIDE FILMS; OXIDE MINERALS; SPUTTER DEPOSITION; THIN FILMS; TUNNEL JUNCTIONS; TUNNELLING MAGNETORESISTANCE;

COLLISION CASCADE; CRYSTALLOGRAPHIC CHARACTERISTICS; CRYSTALLOGRAPHIC ORIENTATIONS; ELEMENTARY PROCESS; ENERGY TRANSFER EFFICIENCY; MAGNETIC TUNNEL JUNCTION; SPUTTERING GAS; TUNNELING MAGNETORESISTANCE;

GAS PERMEABLE MEMBRANES;

EID: 77955138855     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2008.2002410     Document Type: Article

References (8)

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