Silicon nanowire piezoresistance: Impact of surface crystallographic orientation

Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

  Barwicz, Tymon ^a   Klein, Levente ^a   Koester, Steven J ^a,b   Hamann, Hendrik ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL WORK; PIEZORESISTANCE; SILICON NANOWIRES; SURFACE CRYSTALLOGRAPHIC ORIENTATION; SURFACE STATE;

ASPECT RATIO;

NANOWIRES;

EID: 77955133241     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3463456     Document Type: Article

References (10)

1. R. He and P. Yang, Nat. Nanotechnol. NNAABX 1748-3387 1, 42 (2006). 10.1038/nnano.2006.53
2. R. Hull, Properties of Crystalline Silicon (The Institution of Electronic Engineers, London, 1999).
3. T. Toriyama, Y. Tanimoto, and S. Sugiyama, J. Microelectromech. Syst. JMIYET 1057-7157 11, 605 (2002). 10.1109/JMEMS.2002.802905 (Pubitemid 35242067)
4. K. Reck, J. Richter, O. Hansen, and E. V. Thomsen, Proceedings of the 2008 IEEE Conference on Microelectromechanical Systems (IEEE, New York, 2008), p. 717.
5. J. X. Cao, X. G. Gong, and R. Q. Wu, Phys. Rev. B PLRBAQ 0556-2805 75, 233302 (2007). 10.1103/PhysRevB.75.233302
6. A. C. H. Rowe, Nat. Nanotechnol. NNAABX 1748-3387 3, 311 (2008). 10.1038/nnano.2008.108 (Pubitemid 351809605)
7. K. Nakamura, Y. Isono, T. Toriyama, and S. Sugiyama, Jpn. J. Appl. Phys. JJAPA5 0021-4922 48, 06FG09 (2009). 10.1143/JJAP.48.06FG09
8. Y. Miura, Jpn. J. Appl. Phys. JJAPA5 0021-4922 4, 958 (1965). 10.1143/JJAP.4.958
9. Synopsys Taurus TSUPREM-4 Version Z-2007, 03, www.synopsys.com.
10. H. Fujii, S. Kanemaru, T. Matsukawa, and J. Itohb, Appl. Phys. Lett. APPLAB 0003-6951 75, 3986 (1999). 10.1063/1.125514