Electrical and Raman scattering studies of ZnO:P and ZnO:Sb thin films

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 4, 2010, Pages 2620-2623

  De Campos, J Ayres ^a   Viseu, T ^a   Rolo, A G ^a   Barradas, N P ^b   Alves, E ^b   De Lacerda Aroso T ^a   Cerqueira, M F ^a  

^a UNIVERSITY OF MINHO   (Portugal)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Hall effect; Ion implantation; P type doping; Raman; X ray; ZnO

Indexed keywords

DOPED FILMS; ELECTRIC RESISTIVITY; ELECTRICAL AND OPTICAL PROPERTIES; HALL EFFECT MEASUREMENT; OPTICAL TRANSMITTANCE; P-TYPE CONDUCTION; P-TYPE DOPING; POLYCRYSTALLINE; PREFERRED ORIENTATIONS; R.F. MAGNETRON SPUTTERING; RAMAN; SB-DOPED; ZNO; ZNO THIN FILM;

ANTIMONY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GYRATORS; HALL EFFECT; ION IMPLANTATION; OPTICAL PROPERTIES; PHOSPHORUS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; THIN FILMS; X RAY DIFFRACTION; X RAYS; ZINC OXIDE;

MAGNETIC FIELD EFFECTS;

EID: 77955009953     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.1381     Document Type: Conference Paper

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