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Volumn 6, Issue SUPPL. 1, 2009, Pages
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Simulation of the substrate temperature field for plasma assisted chemical etching
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Author keywords
Computer modeling; Plasma jet; Surface temperature
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Indexed keywords
CHEMICAL ETCHING;
COMPREHENSIVE METHOD;
COMPUTER MODELING;
MATERIAL REMOVAL RATE;
MODEL PARAMETERS;
MOVING HEAT SOURCES;
OPTICAL ELEMENTS;
PROCESS SIMULATIONS;
PURE CHEMICALS;
REACTIVE PLASMAS;
SUBSTRATE TEMPERATURE;
SURFACE FIGURING;
SURFACE TEMPERATURE DISTRIBUTION;
SURFACE TEMPERATURES;
TRANSIENT HEAT TRANSFER;
WORK PIECES;
ATMOSPHERIC TEMPERATURE;
ETCHING;
HEAT TRANSFER;
PLASMA ACCELERATORS;
PLASMA JETS;
PLASMAS;
SURFACE PROPERTIES;
TEMPERATURE MEASUREMENT;
COMPUTER SIMULATION;
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EID: 77954911802
PISSN: 16128850
EISSN: 16128869
Source Type: Journal
DOI: 10.1002/ppap.200930509 Document Type: Conference Paper |
Times cited : (27)
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References (14)
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