Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell

Applied Physics Letters

Volumn 97, Issue 1, 2010, Pages

  Nolasco, J C ^a   Sánchez Díaz, Antonio ^b   Cabr R ^a   Ferr Borrull J ^a   Marsal, L F ^a   Palomares, E ^b,c   Pallars J ^a  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^b INSTITUTE OF CHEMICAL RESEARCH OF CATALONIA ICIQ   (Spain)

^c INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BARRIER HEIGHTS; BUILT-IN POTENTIAL; CAPACITANCE VOLTAGE CHARACTERISTIC; EFFECTIVE-DOPING CONCENTRATION; ELECTRONS AND HOLES; ENERGY DIAGRAM; PENTACENES; PHYSICAL PARAMETERS; TEMPERATURE DEPENDENCE; VOLTAGE CHARACTERISTICS;

HETEROJUNCTIONS; SOLAR CELLS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77954724801     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3456393     Document Type: Article

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