A 3.4 GHz to 4.3 GHz frequency-reconfigurable class E power amplifier with an integrated CMOS-MEMS LC balun

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2010, Pages 167-170

  Wang, Leon ^a   Mukherjee, Tamal ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Microelectromechanical devices; Power amplifiers; Power combiners

Indexed keywords

BI-CMOS PROCESS; CLASS E POWER AMPLIFIERS; CMOS-MEMS; DIFFERENTIAL TO SINGLE-ENDED; GHZ FREQUENCIES; MAXIMUM OUTPUT POWER; MAXIMUM POWER; MONOLITHICALLY INTEGRATED; POWER COMBINER; POWER COMBINERS; RE-CONFIGURABLE; SUPPLY VOLTAGES;

DIGITAL INTEGRATED CIRCUITS; INTEGRATED CIRCUITS; MICROELECTROMECHANICAL DEVICES; MONOLITHIC INTEGRATED CIRCUITS; RADIO; RADIO WAVES;

POWER AMPLIFIERS;

EID: 77954496770     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2010.5477276     Document Type: Conference Paper

References (8)

1. A. Fukuda, et al, "A 900/1500/2000-MHz Triple-Band Reconfigurable Power Amplifier Employing RF-MEMS Switches," IEEE IMS, pp. 334-347, June 2005.
2. W.C.E. Neo, et al, "Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks," IEEE J. Solid-State Circuits, vol. 41, no. 9, pp. 2166-2176, Sept. 2006
3. I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, "Fully- Integrated CMOS Power Amplifier Design Using Distributed Active Transformer Architecture", IEEE J. Solid-State Circuits, vol. 37, no. 3, pp. 371-383, Mar. 2001.
4. P. Haldi, et al, "A 5.8-GHz linear power amplifier in a standard 90-nm CMOS process using a 1-V power supply," IEEE RFIC, pp. 431-434, Jun. 2007.
5. P. Reynaert and M. S. J. Steyaert, "A 2.45-GHz 0.13-μm CMOS PA with parallel amplification," IEEE J. Solid-State Circuits, vol. 42, no. 3, pp. 551-561, Mar. 2007.
6. A. Jajoo, L. Wang, and T. Mukherjee, "MEMS Varactor Enabled Frequency-Reconfigurable LNA and PA in the Upper UHF Band," IEEE IMS, pp. 1121-1124, June 2009.
7. G.K. Fedder, et al, "Laminated High-Aspect Ratio Microstructures In A Conventional CMOS Process," Sensors & Actuators, vol. A57, no. 2, pp. 103-110, Mar. 1997.
8. J. Reinke, et al, "CMOS-MEMS Variable Capacitors with Low Parasitic Capacitance for Frequency-Reconfigurable RF Circuits," IEEE RFIC, pp. 509-512, June 2009.