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IEEJ Transactions on Sensors and Micromachines

Volumn 130, Issue 6, 2010, Pages

Preparation of thin lithium niobate layer on silicon wafer for wafer-level integration of acoustic devices and LSI

(3) Park, KyeongDong a Esashi, Masayoshi a Tanaka, Shuji a

a TOHOKU UNIVERSITY (Japan)

Author keywords

Acoustic devices; Bonding; Lithium niobate; Polishing; Uv adhesive

Indexed keywords

ADHESIVE BONDING; COEFFICIENT OF THERMAL EXPANSION; FABRICATION PROCESS; HYBRID SUBSTRATES; INDUCED STRESS; KEY TECHNOLOGIES; LITHIUM NIOBATE; PLASMA TREATMENT; SACRIFICIAL LAYER; SI SUBSTRATES; SURFACE ACOUSTIC WAVE DEVICE; UV ADHESIVE; WAFER-LEVEL INTEGRATION;

ACOUSTIC SURFACE WAVE DEVICES; ACOUSTIC WAVES; ACOUSTICS; LITHIUM; NIOBIUM COMPOUNDS; PLASMA APPLICATIONS; POLISHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SUBSTRATES; THERMAL EXPANSION;

WAFER BONDING;

EID: 77954442204 PISSN: 13418939 EISSN: 13475525 Source Type: Journal
DOI: 10.1541/ieejsmas.130.236 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.