Interaction of GaN(0001)-2×2 surfaces with H2O

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 2, 2010, Pages 169-172

  Lorenz, P ^a   Gutt, R ^b   Haensel, T ^a   Himmerlich, M ^a   Schaefer, J A ^a   Krischok, S ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BANDBENDING; CORE-LEVEL SPECTRA; DISSOCIATIVE ADSORPTION; FLAT BAND; HIGH REACTIVITY; IN-SITU ANALYSIS; LANGMUIRS; MOLECULAR WATER; PHOTOEMISSION SPECTRA; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SATURATION COVERAGE; STICKING COEFFICIENTS; SURFACE STATE; TEMPORAL BEHAVIOR;

ADSORPTION; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSCIENCE; OXYGEN;

EMISSION SPECTROSCOPY;

EID: 77954345227     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982488     Document Type: Conference Paper

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