Electronic structures and optical properties of GaN and ZnOnanowires from first principles

Journal of Physics: Conference Series

Volumn 100, Issue PART 5, 2008, Pages

  Akiyama, Toru ^a,b   Freeman, Arthur J ^a   Nakamura, Kohji ^b   Ito, Tomonori ^b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM NITRIDE; NANOWIRES; WIDE BAND GAP SEMICONDUCTORS;

DIELECTRIC FUNCTIONS; DIPOLE MATRIX ELEMENTS; FULL POTENTIAL LINEARIZED AUGMENTED PLANE WAVE METHOD; MICROSCOPIC PROPERTIES; QUANTUM CONFINEMENT EFFECTS; SEMICONDUCTOR NANOWIRE; STRONG ANISOTROPY; THEORETICAL FRAMEWORK;

OPTICAL PROPERTIES;

EID: 77954335419     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/100/5/052056     Document Type: Conference Paper

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