Excitation density dependence of the photoluminescence from Cd xHg1-xTe multiple quantum wells

Journal of Physics: Conference Series

Volumn 100, Issue PART 4, 2008, Pages

  Tonheim, C R ^a   Selvig, E ^a   Nicolas, S ^a   Gunnoes A E ^b   Breivik, M ^a,c   Haakenaasen, R ^a  

^a NORWEGIAN DEFENCE RESEARCH ESTABLISHMENT FFI   (Norway)

^b UNIVERSITY OF OSLO   (Norway)

^c NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITED STATES; FULL WIDTH AT HALF MAXIMUM; GROUND STATE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MODULATORS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; CADMIUM ALLOYS; CADMIUM METALLOGRAPHY; MERCURY AMALGAMS; NANOSCIENCE; SEMICONDUCTOR ALLOYS; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

EXCITATION DENSITY; GROUND-STATE ELECTRONS; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; MULTIPLE QUANTUM-WELL STRUCTURES; PEAK POSITION; PHOTOLUMINESCENCE PEAK; QUANTUM WELL STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77954324987     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/100/4/042024     Document Type: Conference Paper

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