Fabrication of vertically aligned Si nanowires on Si (100) substrates utilizing metal-assisted etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 4, 2010, Pages 735-740

  Hong, Junki ^a   Kim, Kyohyeok ^a   Kwon, Namyong ^a   Lee, Jaehyun ^a   Whang, Dongmok ^a   Chung, Ilsub ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AAO TEMPLATE; AG FILMS; ANODIC ALUMINUM OXIDE; HOLE SIZE; METAL-ASSISTED CHEMICAL ETCHING; SI (100) SUBSTRATE; SI NANOWIRE; SI SUBSTRATES; VERTICALLY ALIGNED;

ETCHING; NANOWIRES; SILVER; SUBSTRATES;

SILICON;

EID: 77954191638     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3336572     Document Type: Conference Paper

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