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Volumn 27, Issue 11, 1998, Pages 1268-1271

Amorphous chromium silicide formation in hydrogenated amorphous silicon

Author keywords

Amorphous chromium suicide; Amorphous thin films; Hydrogenated amorphous silicon; Silicide growth

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CHROMIUM COMPOUNDS; CRYSTALLINE MATERIALS; SPUTTER DEPOSITION; THERMAL CONDUCTIVITY OF SOLIDS; THIN FILMS;

EID: 0032207778     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0081-8     Document Type: Article
Times cited : (13)

References (19)
  • 12
    • 0346562708 scopus 로고
    • Proc. 15th. Conf. Physics of Semiconductors
    • Kyoto, 1980
    • C.C. Tsai R.J. Nemanich and T.W. Sigmon, Proc. 15th. Conf. Physics of Semiconductors, Kyoto, 1980, J. Phys. Soc. of Jpn. 49 Suppl. A, 1265 (1980).
    • (1980) J. Phys. Soc. of Jpn. , vol.49 , Issue.SUPPL. A , pp. 1265
    • Tsai, C.C.1    Nemanich, R.J.2    Sigmon, T.W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.