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Volumn 48, Issue 2, 2009, Pages

Characterization and analyses of interface structures in directly bonded Si(011)/Si(001) substrates

(8) Toyoda, Eiji a,b Sakai, Akira c Isogai, Hiromichi a Senda, Takeshi a Izunome, Koji a Omote, Kazuhiko d Nakatsuka, Osamu b Zaima, Shigeaki b

a Nissei Bldg (Japan)

b NAGOYA UNIVERSITY (Japan)

c OSAKA UNIVERSITY (Japan)

d RIGAKU CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL TEM; CRYSTALLINITY; DEFORMATION FIELDS; GRAZING INCIDENCES; IN PLANES; INTERFACE STRUCTURES; INTERFACIAL PLANES; INTERFACIAL STRUCTURES; MOSAIC STRUCTURES; SCREW DISLOCATIONS; SI (001) SUBSTRATES; SI(0 0 1); SI(011); TEM; THREADING DISLOCATIONS; X- RAY DIFFRACTIONS; XRD ANALYSIS;

SILICON;

EID: 60849084138 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.021208 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.