Light beam induced current measurements on ZnO Schottky diodes and MESFETs

Materials Research Society Symposium Proceedings

Volumn 1201, Issue , 2010, Pages 67-72

  Von Wenckstern, H ^a   Zhang, Z P ^a   Lorenz, M ^a   Czekalla, C ^a   Frenzel, H ^a   Lajn, A ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; CHANNEL CONDITIONS; EQUIPOTENTIAL SURFACES; INDUCED CURRENT MEASUREMENTS; LIGHT BEAM; LIGHT BEAM INDUCED CURRENTS; MESFETS; MICROMETER SCALE; OPEN CHANNELS; ORDER OF MAGNITUDE; PHOTOCURRENT GENERATIONS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SOURCE-DRAIN; SOURCE-DRAIN VOLTAGE; ZNO;

ELECTRIC CURRENT MEASUREMENT; FIELD EFFECT TRANSISTORS; INDUCED CURRENTS; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILVER; ZINC;

ZINC OXIDE;

EID: 77953982791     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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