Silicon as a model ion trap: Time domain measurements of donor Rydberg states

Proceedings of the National Academy of Sciences of the United States of America

Volumn 105, Issue 31, 2008, Pages 10649-10653

  Vinh, N Q ^a   Greenland, P T ^b   Litvinenko, K ^c   Redlich, B ^a   Van Der Meer, A F G ^a   Lynch, S A ^b   Warner, M ^b   Stoneham, A M ^b   Aeppli, G ^b   Paul, D J ^d   Pidgeon, C R ^e   Murdin, B N ^c  

^a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d UNIVERSITY OF GLASGOW   (United Kingdom)

^e HERIOT WATT UNIVERSITY   (United Kingdom)

Author keywords

Coherence; Free electron laser; Hydrogenic donor impurity; Picosecond population dynamics; Quantum information

Indexed keywords

ION; SILICON;

ABSORPTION; ARTICLE; ATOM; ELECTRON TRANSPORT; ION TRAP MASS SPECTROMETRY; NUCLEAR MAGNETIC RESONANCE; PHYSICS; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 49449118891     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.0802721105     Document Type: Article

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