InGaAs/InP SPADs for near-infrared applications: Device operating conditions and dedicated electronics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7681, Issue , 2010, Pages

  Tosi, Alberto ^a   Dalla Mora, Alberto ^a   Tisa, Simone ^b   Acerbi, Fabio ^a   Zappa, Franco ^a,b   Cova, Sergio ^a,b  

^a POLITECNICO DI MILANO   (Italy)

^b Micro Photon Devices Srl   (Italy)

Author keywords

afterpulsing; avalanche photodiodes; InGaAs; photon counting; single photon avalanche diode; SPAD

Indexed keywords

AFTERPULSING; DARK COUNT RATE; DETECTION EFFICIENCY; FRONT-END CIRCUITS; INGAAS/INP; NEAR-INFRARED APPLICATIONS; OPERATING CONDITION; PHOTON COUNTING; QUENCHING CIRCUITS; SINGLE PHOTON AVALANCHE DIODE; SINGLE-PHOTON COUNTING; WORKING CONDITIONS;

AVALANCHE PHOTODIODES; DIODES; INFRARED DEVICES; PARTICLE BEAMS; PHOTODIODES; PHOTONS; SEMICONDUCTING INDIUM; TIME MEASUREMENT; TIMING CIRCUITS; TIMING JITTER;

AVALANCHE DIODES;

EID: 77953806399     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.850696     Document Type: Conference Paper

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