Gate-controlled one-dimensional channel on the surface of a 3D topological insulator

Physical Review Letters

Volumn 104, Issue 24, 2010, Pages

  Yokoyama, Takehito ^a   Balatsky, Alexander V ^b   Nagaosa, Naoto ^c,d  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF TOKYO   (Japan)

^d ASI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC STRUCTURES; BOUND STATE; CORRELATION EFFECT; ENERGY DISPERSIONS; GATE ELECTRODES; GATE VOLTAGES; LOCAL DENSITY OF STATE; ONE-DIMENSIONAL CHANNELS;

ELECTRON-ELECTRON INTERACTIONS;

TOPOLOGY;

EID: 77953757235     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.104.246806     Document Type: Article

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