Ni and Zn doped MgTiO3 thin films: Structure, microstructure, and dielectric characteristics

Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

  Surendran, Kuzhichalil P ^a   Wu, Aiying ^a   Vilarinho, Paula M ^a   Ferreira, Victor M ^b  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

D ELECTRONS; DIELECTRIC CHARACTERISTICS; DIELECTRIC PERMITTIVITIES; DIELECTRIC RESPONSE; DOPANT CATION; IONIC POLARIZABILITIES; LOW LOSS; NI-DOPING; TEMPERATURE STABILITY; UNIT CELL PARAMETERS;

CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; DIELECTRIC LOSSES; GELS; OXIDE MINERALS; PERMITTIVITY; POLARIZATION; THIN FILMS; ZINC;

DOPING (ADDITIVES);

EID: 77953643392     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3356938     Document Type: Article

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