Advantageous reverse recovery behavior of pentacene/ZnO diode

Electrochemical and Solid-State Letters

Volumn 13, Issue 8, 2010, Pages

  Lee, Kwang H ^a   Park, Aaron ^a   Im, Seongil ^a   Park, Yerok ^b   Kim, Su H ^b   Sung, Myung M ^b   Lee, Seungjun ^c  

^a Yonsei University   (South Korea)

^b Hanyang University   (South Korea)

^c Ewha Womans University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FAST SWITCHING; FORWARD CURRENTS; MINORITY CARRIER; PENTACENES; PLASTIC SUBSTRATES; REVERSE RECOVERY; THIN FILM DIODE; ZNO;

ATOMIC LAYER DEPOSITION; DIODES; MOBILE TELECOMMUNICATION SYSTEMS; RECOVERY; SILICON; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77953579958     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3428743     Document Type: Article

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