Advanced self-aligned DP process development for 22-nm node and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7639, Issue , 2010, Pages

  Hara, Arisa ^a   Nishimura, Eiichi ^a   Kushibiki, Masato ^a   Yamauchi, Shoichi ^a   Natori, Sakurako ^a   Yabe, Kazuo ^a   Oyama, Kenichi ^a   Yaeasghi, Hidetami ^a  

^a TOKYO ELECTRON LTD   (Japan)

Author keywords

22 nm; double patterning; low temperature SiO2; LWR; self aligned DP; spacer DP

Indexed keywords

193-NM EXPOSURE TOOLS; 32-NM NODE; DOUBLE PATTERNING; ETCHING MASKS; LOW TEMPERATURES; MINIMUM FEATURE SIZES; NUMERICAL APERTURE; OVERLAY ACCURACY; PROCESS DEVELOPMENT; REPETITIVE PATTERN; RESOLUTION ENHANCEMENT TECHNIQUE; SELF-ALIGNED;

NANOTECHNOLOGY; SILICON COMPOUNDS;

MASKS;

EID: 77953519946     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846465     Document Type: Conference Paper

References (4)

1. M. Maenhoudt, J. Versluijs, H. Struyf, J. Van Olmen, M. Van Hove, "Double Patterning scheme for sub-0.25 k1single damascene structures at NA=0.75, λ=193nm," Proc. SPIE 5754, 1508-1518 (2005)
2. Alex K. Raub, S. R. J. Brueck, "Extending 193nm Lithography to the 22-nm HP Node Using Non-Linear Optical Films," SEMATECH Litho Forum (2006)
3. Woo-Yung Jung et al., "Patterning with spacer for extending the resolution limit of current lithography tool," Proc. SPIE6156, 2006
4. Vincent Wiaux et al., "Double Patterning proof-of-concept: from split to 2D patterns in poly" imec ARRM 2006