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Volumn 7639, Issue , 2010, Pages

Non-reciprocal double-exposure materials for 193nm pitch division

Author keywords

193nm; ArF; double exposure; LLE; non reciprocal; pitch division

Indexed keywords

AERIAL IMAGES; ALL-AT-ONCE; BRIDGING DEFECTS; DOUBLE EXPOSURE; NONRECIPROCITY; PHOTOACID GENERATORS; PHOTOBASE GENERATOR; PHOTOPRODUCTS; PHOTORESPONSES; REACTION PATHWAYS; SHIFT-AND; THERMAL STABILITY; TWO STAGE;

EID: 77953497159     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846988     Document Type: Conference Paper
Times cited : (1)

References (9)
  • 1
    • 65849167842 scopus 로고    scopus 로고
    • Newly developed postive tone resists for Posi/Posi double patterning process
    • T. Nakamura, M. Takeshita, S. Maemori, R. Uchida, R. Takasu, K. Ohmori, "Newly developed postive tone resists for Posi/Posi double patterning process", SPIE 7273-03 (2009).
    • (2009) SPIE , vol.7273 , Issue.3
    • Nakamura, T.1    Takeshita, M.2    Maemori, S.3    Uchida, R.4    Takasu, R.5    Ohmori, K.6
  • 6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.