Novel approaches to controlling photo-resist CD in double patterning processes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7639, Issue , 2010, Pages

  Yabe, Kazuo ^a   Hasebe, Kazuhide ^a   Nakajima, Shigeru ^a   Murakami, Hiroki ^a   Hara, Arisa ^a   Yamauchi, Shoichi ^a   Natori, Sakurako ^a   Oyama, Kenichi ^a   Yaeasghi, Hidetami ^a  

^a TOKYO ELECTRON LTD   (Japan)

Author keywords

22 nm; aspect ratio; double patterning; LWR; pattern collapse; slimming

Indexed keywords

193-NM EXPOSURE TOOLS; 32-NM NODE; DOUBLE PATTERNING; ETCHING MASKS; MINIMUM FEATURE SIZES; NUMERICAL APERTURE; PATTERN COLLAPSE; PATTERN HEIGHTS; RESOLUTION ENHANCEMENT TECHNIQUE; ROBUST PATTERNS; WATER BASED;

ETCHING; MASKS; NANOTECHNOLOGY; PHOTORESISTS; PRESSURE DROP;

ASPECT RATIO;

EID: 77953482553     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846468     Document Type: Conference Paper

References (3)

1. M. Maenhoudt, J. Versluijs, H. Struyf, J. Van Olmen, M. Van Hove, "Double Patterning scheme for sub-0.25 k1single damascene structures at NA=0.75, λ=193nm," Proc. SPIE 5754, 1508-1518 (2005).
2. Alex K. Raub, S. R. J. Brueck, "Extending 193nm Lithography to the 22-nm HP Node Using Non-Linear OpticalFilms," SEMATECH Litho Forum , ,(2006).
3. Woo-Yung Jung, et al., "Patterning with spacer for extending the resolution limit of current lithography tool" Proc. SPIE6156, , (2006).