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Volumn 7636, Issue , 2010, Pages

Particle removal challenges of EUV patterned masks for the sub-22nm HP node

Author keywords

defect printability; EUVL; Mask Defects; Ru oxidation; SEM damage; sub 20 nm defects cleaning

Indexed keywords

DEFECT PRINTABILITY; EUVL; MASK DEFECTS; RU OXIDATION; SEM; SEM DAMAGE;

EID: 77953470399     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.847056     Document Type: Conference Paper
Times cited : (21)

References (8)
  • 1
    • 77953453721 scopus 로고    scopus 로고
    • Investigation of buried EUV mask defect printability using actinic inspection and fast simulation
    • Ch. H. Clifford et al., "Investigation of buried EUV mask defect printability using actinic inspection and fast simulation," Proc. SPIE 7488,74882H (2009),
    • (2009) Proc. SPIE , vol.7488
    • Clifford, Ch.H.1
  • 2
    • 67149121194 scopus 로고    scopus 로고
    • Mask defect verification using actinic inspection and defect mitigation technology
    • See also latest Gullikson results in
    • See also latest Gullikson results in S. Huh, et al., "Mask defect verification using actinic inspection and defect mitigation technology," Proc. SPIE 7271, 72713J (2009).
    • (2009) Proc. SPIE , vol.7271
    • Huh, S.1
  • 3
    • 67149107766 scopus 로고    scopus 로고
    • Development of actinic full-field EUV mask b lank inspection tool at MIRAI-Selete
    • See also the latest Terasawa results in
    • See also the latest Terasawa results in T. Terasawa, et al., "Development of actinic full-field EUV mask b lank inspection tool at MIRAI-Selete," Proc. SPIE 7271, 727122 (2009).
    • (2009) Proc. SPIE , vol.7271 , pp. 727122
    • Terasawa, T.1
  • 4
    • 69949169980 scopus 로고    scopus 로고
    • Investigation of EUV mask defectivity via full-field printing and inspection on wafer
    • R. Jonckheere et al., "Investigation of EUV mask defectivity via full-field printing and inspection on wafer," Proc. SPIE 7379,73790R (2009),
    • (2009) Proc. SPIE , vol.7379
    • Jonckheere, R.1
  • 5
    • 65849248744 scopus 로고    scopus 로고
    • Integration of EUV lithography in fabrication of 22 nm node devices
    • See also
    • See also O. Wood, et al., "Integration of EUV lithography in fabrication of 22 nm node devices," Proc. SPIE 7271,727104 (2009),
    • (2009) Proc. SPIE , vol.7271 , pp. 727104
    • Wood, O.1
  • 6
    • 77953379340 scopus 로고    scopus 로고
    • Microspheres-Nanospheres, Cold Spring, NY, USA
    • Microspheres-Nanospheres, Cold Spring, NY, USA
  • 7
    • 77953461195 scopus 로고    scopus 로고
    • EUV Technology, Martinez, CA, USA
    • EUV Technology, Martinez, CA, USA
  • 8
    • 77953427025 scopus 로고    scopus 로고
    • SONOSYS Ultraschallsysteme GmbH, Neuenbürg, Germany
    • SONOSYS Ultraschallsysteme GmbH, Neuenbürg, Germany


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.