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Volumn 204, Issue 18-19, 2010, Pages 3029-3033
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Effects of process parameters on the structure of hydrogenated amorphous carbon films processed by electron cyclotron resonance plasma enhanced chemical vapor deposition
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Author keywords
Bonding structure; Electron cyclotron resonance microwave plasma chemical vapor deposition; Hydrogenated amorphous carbon film; Raman spectra
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Indexed keywords
A-C:H FILMS;
BONDING RATIO;
BONDING STRUCTURE;
CHEMICAL VAPOR;
ELECTRON CYCLOTRON RESONANCE MICROWAVE PLASMA;
ELECTRON CYCLOTRON RESONANCE PLASMA;
HYDROGEN CONTENTS;
HYDROGENATED AMORPHOUS CARBON (A-C:H);
HYDROGENATED AMORPHOUS CARBON FILMS;
MICROWAVE POWER;
ORTHOGONAL EXPERIMENTAL DESIGN;
PROCESS PARAMETERS;
RAMAN SPECTRA;
SI (100) SUBSTRATE;
SUBSTRATE BIAS VOLTAGES;
VISIBLE RAMAN SPECTRA;
AMORPHOUS CARBON;
AMORPHOUS FILMS;
AMORPHOUS SILICON;
BIAS VOLTAGE;
CYCLOTRONS;
DIAMOND LIKE CARBON FILMS;
DOSIMETRY;
ELECTRON CYCLOTRON RESONANCE;
ELECTRONS;
HYDROGENATION;
MICROWAVE GENERATION;
MICROWAVE POWER TRANSMISSION;
PLASMA DEPOSITION;
PLASMA DIAGNOSTICS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
PLASMAS;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
RESONANCE;
VAPOR DEPOSITION;
CARBON FILMS;
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EID: 77953360990
PISSN: 02578972
EISSN: None
Source Type: Journal
DOI: 10.1016/j.surfcoat.2010.02.012 Document Type: Article |
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Times cited : (5)
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References (15)
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