Defect studies in ion irradiated AlGaN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 11-12, 2010, Pages 2056-2059

  Jagielski, J ^a,b   Thome L ^c   Zhang, Y ^d   Wang, C M ^d   Turos, A ^a,b   Nowicki, L ^b   Pagowska, K ^b   Jozwik, I ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^c CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

^d PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Dislocations; Monte Carlo simulations; Rutherford Backscattering Channeling

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; BACKSCATTERING; DISLOCATIONS (CRYSTALS); GALLIUM ALLOYS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INTELLIGENT SYSTEMS; ION BOMBARDMENT; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

AL0.4GA0.6N; AR-ION IRRADIATION; BACKSCATTERING SPECTRA; DEFECT STUDY; DISLOCATION LOOP; MC SIMULATION; MEV ENERGY; RUTHERFORD BACKSCATTERING/CHANNELING;

MONTE CARLO METHODS;

EID: 77953302710     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.02.055     Document Type: Article

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