SRAF enhancement using inverse lithography for 32 nm hole patterning and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7488, Issue , 2009, Pages

  Farys, V ^a   Chaoui, F ^b   Entradas, J ^b   Robert, F ^a   Toublan, O ^b   Trouiller, Y ^c  

^a STMICROELECTRONICS   (France)

^b MENTOR GRAPHICS CORPORATION   (United States)

^c CEA LETI   (France)

Author keywords

Inverse Lithography; Logic 32 nm; Model based SRAF; MRC

Indexed keywords

32-NM NODE; DEPTH OF FOCUS; INVERSE LITHOGRAPHY; LOGIC 32 NM; MASK WRITING; MODEL-BASED SRAF; MRC; RANDOM HOLES; RULE BASED; RULE-BASED APPROACH; RUNTIME PERFORMANCE; SIZE AND POSITION; SRAF PLACEMENT; SUB-RESOLUTION ASSIST FEATURE; THROUGH PITCH;

PHOTOMASKS;

LITHOGRAPHY;

EID: 77953267200     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.829894     Document Type: Conference Paper

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