SCOPUS 정보 검색 플랫폼

Volumn 49, Issue 5 PART 3, 2010, Pages

Hybrid electrochemical mechanical planarization process for CU dual-damascene through-silicon via using noncontact electrode pad

(6) Tominaga, Shigeru a Abe, Daisuke a Enomoto, Taro a Kondo, Seiichi a,b Kitada, Hideki a,c Ohba, Takayuki a,c

a Tokyo Roki Co Ltd (Japan)

b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL PLANARIZATIONS; CMP PAD; CU DAMASCENE; CU FILMS; DUAL DAMASCENE; ELECTROCHEMICAL MECHANICAL PLANARIZATION; METAL PAD; NON-CONTACT; REMOVAL RATE; THREE DIMENSIONAL INTEGRATED CIRCUITS; WAFER LEVEL;

METALLIC FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THREE DIMENSIONAL;

COPPER;

EID: 77953166677 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.05FG01 Document Type: Article

Times cited : (10)

References (14)

1
- 63149189577
- A. Jourdain, S. Stoukatch, P. De Moor, W. Ruythooren, S. Pargfrieder, B. Swinnen, and E. Beyne: Proc. IITC, 2007, p. 207.
- (2007) Proc. IITC , pp. 207
- Jourdain, A.¹ Stoukatch, S.² De Moor, P.³ Ruythooren, W.⁴ Pargfrieder, S.⁵ Swinnen, B.⁶ Beyne, E.⁷

2
- 70349468264
- F. Liu, R. R. Yu, A. M. Young, J. P. Wang, L. Shi, K.-N. Chen, X. Li, D. A. Dipaola, D. Brown, C. T. Ryan, J. A. Hagan, K. H. Wong, M. Lu, X. Gu, N. R. Klymko, E. D. Perfecto, A. G. Merryman, K. A. Kelly, S. Purushothaman, S. J. Koester, R. Wisnieff, and W. Haensh: IEDM Tech. Dig., 2008, p. 599.
- (2008) IEDM Tech.Dig. , pp. 599
- Liu, F.¹ Yu, R.R.² Young, A.M.³ Wang, J.P.⁴ Shi, L.⁵ Chen, K.-N.⁶ Li, X.⁷ Dipaola, D.A.⁸ Brown, D.⁹ Ryan, C.T.¹⁰ Hagan, J.A.¹¹ Wong, K.H.¹² Lu, M.¹³ Gu, X.¹⁴ Klymko, N.R.¹⁵ Perfecto, E.D.¹⁶ Merryman, A.G.¹⁷ Kelly, K.A.¹⁸ Purushothaman, S.¹⁹ Koester, S.J.²⁰ Wisnieff, R.²¹ Haensh, W.²² more..

3
- 35348862384
- Y. Kurita, S. Matsui, N. Takahashi, K. Soejima, M. Komuro, M. Itou, C. Kakegawa, M. Kawano, Y. Egawa, Y. Saeki, H. Kikuchi, O. Kato, A. Yanagishawa, T. Mitsuhashi, M. Ishino, K. Shibata, S. Uchiyama, J. Yamada, and H. Ikeda: Proc. Electron Components and Technology Conf., 2007, p. 821.
- (2007) Proc. Electron Components and Technology Conf. , pp. 821
- Kurita, Y.¹ Matsui, S.² Takahashi, N.³ Soejima, K.⁴ Komuro, M.⁵ Itou, M.⁶ Kakegawa, C.⁷ Kawano, M.⁸ Egawa, Y.⁹ Saeki, Y.¹⁰ Kikuchi, H.¹¹ Kato, O.¹² Yanagishawa, A.¹³ Mitsuhashi, T.¹⁴ Ishino, M.¹⁵ Shibata, K.¹⁶ Uchiyama, S.¹⁷ Yamada, J.¹⁸ Ikeda, H.¹⁹

4
- 70349473495
- P. Leduc, F. de Crecy, M. Fayolle, B. Charlet, T. Enot, M. Zussy, B. Jones, J.-C. Barbe, N. Kernevez, N. Sillon, S. Maitrejean, D. Louis, and G. Passemard: Proc. IITC, 2007, p. 210.
- (2007) Proc. IITC , pp. 210
- Leduc, P.¹ De Crecy, F.² Fayolle, M.³ Charlet, B.⁴ Enot, T.⁵ Zussy, M.⁶ Jones, B.⁷ Barbe, J.-C.⁸ Kernevez, N.⁹ Sillon, N.¹⁰ Maitrejean, S.¹¹ Louis, D.¹² Passemard, G.¹³

5
- 77953141012
- Miyakawa N., Maebashi T., Nakamura N., Nakayama S., Toyoda S.. Proc. 3D Architectures for Semiconductor Integration and Packing, 2006.
- (2006) Proc. 3D Architectures for Semiconductor Integration and Packing
- Miyakawa, N.¹ Maebashi, T.² Nakamura, N.³ Nakayama, S.⁴ Toyoda, S.⁵

6
- 77953159756
- N. Maeda, H. Kitada, K. Fujimoto, T. Nakamura, and T. Ohba: Proc. AMC, 2009, p. 501.
- (2009) Proc. AMC , pp. 501
- Maeda, N.¹ Kitada, H.² Fujimoto, K.³ Nakamura, T.⁴ Ohba, T.⁵

7
- 77953159210
- D. Abe, T. Enomoto, S. Tominaga, H. Kitada, and T. Ohba: Proc. ADMETA, 2009, p. 32.
- (2009) Proc. ADMETA , pp. 32
- Abe, D.¹ Enomoto, T.² Tominaga, S.³ Kitada, H.⁴ Ohba, T.⁵

8
- 77953169058
- H. Kitada, N. Maeda, K. Fujimoto, K. Suzuki, K. Kawai, K. Arai, T. Nakamura, and T. Oba: Proc. IITC, 2009, p. 107.
- (2009) Proc. IITC , pp. 107
- Kitada, H.¹ Maeda, N.² Fujimoto, K.³ Suzuki, K.⁴ Kawai, K.⁵ Arai, K.⁶ Nakamura, T.⁷ Oba, T.⁸

9
- 50249087566
- S. Kondo, D. Abe, T. Enomoto, S. Tominaga, K. Yamada, and S. Saito: Proc. IITC, 2005, p. 203.
- (2005) Proc. IITC , pp. 203
- Kondo, S.¹ Abe, D.² Enomoto, T.³ Tominaga, S.⁴ Yamada, K.⁵ Saito, S.⁶

10
- 34548846136
- S. Kondo, K. Fukaya, K. Yamada, T. Miyazaki, M. Fujita, D. Abe, S. Kunisaki, T. Enomoto, and S. Tominaga: Microelectron. Eng. 84 (2007) 2615.
- (2007) Microelectron. Eng. , vol.84 , pp. 2615
- Kondo, S.¹ Fukaya, K.² Yamada, K.³ Miyazaki, T.⁴ Fujita, M.⁵ Abe, D.⁶ Kunisaki, S.⁷ Enomoto, T.⁸ Tominaga, S.⁹

11
- 77953147611
- S. Kondo, D. Abe, T. Enomoto, S. Tominaga, K. Yamada, and S. Saito: Proc. IITC, 2008, p. 82.
- (2008) Proc. IITC , pp. 82
- Kondo, S.¹ Abe, D.² Enomoto, T.³ Tominaga, S.⁴ Yamada, K.⁵ Saito, S.⁶

12
- 77953148161
- K. Bennedine, A. Chabourel, D. Scevola, M. Rivoire, P. Bridger, C. Gillot, X. Buch, and T. Konne: Proc. Int. Conf. Planarization/CMP Technology, 2009, p. 113.
- (2009) Proc. Int. Conf. Planarization/CMP Technology , pp. 113
- Bennedine, K.¹ Chabourel, A.² Scevola, D.³ Rivoire, M.⁴ Bridger, P.⁵ Gillot, C.⁶ Buch, X.⁷ Konne, T.⁸

13
- 77953147975
- J. Ammanokura, H. Ono, K. Honbo, and K. Mabuchi: Proc. Int. Conf. Planarization/CMP Technology, 2009, p. 119.
- (2009) Proc. Int. Conf. Planarization/CMP Technology , pp. 119
- Ammanokura, J.¹ Ono, H.² Honbo, K.³ Mabuchi, K.⁴

14
- 77953158684
- Y. Matsumura and A. Isobe: Proc. Int. Conf. Planarization/CMP Technology, 2009, p. 125.
- (2009) Proc. Int. Conf. Planarization/CMP Technology , pp. 125
- Matsumura, Y.¹ Isobe, A.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.