Wet sulfur passivation of GaSb(1 0 0) surface for optoelectronic applications

Applied Surface Science

Volumn 256, Issue 18, 2010, Pages 5644-5649

  Kunitsyna, E V ^a   L'vova, T V ^a   Dunaevskii, M S ^a   Terent'ev, Ya V ^a   Semenov, A N ^a   Solov'ev, V A ^a   Meltser, B Ya ^a   Ivanov, S V ^a   Yakovlev, Yu P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

AFM; Annealing; GaSb; LPE; MBE; Passivation; Photoluminescence

Indexed keywords

ANNEALING; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; PASSIVATION; PHOTOLUMINESCENCE; SODIUM SULFIDE; SOLUTIONS; SULFUR;

COMPARATIVE ANALYSIS; GASB; MBE GROWTH; OPTOELECTRONIC APPLICATIONS; PL INTENSITY; SULFUR PASSIVATION;

GALLIUM COMPOUNDS;

EID: 77953139028     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.027     Document Type: Article

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