Sensitivity of a receiver using GaInAsSb/AlGaAsSb SAM avalanche photodiode for longwavelength optical communication systems in the mid-infrared spectral range

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7355, Issue , 2009, Pages

  Mikhailova, M P ^a   Andreev, I A ^a   Kunitsyna, E V ^a   Yakovlev, Yu P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Avalanche photodiode; GaInAsSb AlGaAsSb heterostructures; Ionization coefficient ratio; Longwavelength communication; Optical receiver

Indexed keywords

ABSORPTION REGION; BIT RATES; DIRECT DETECTION RECEIVERS; EXCESS NOISE FACTOR; GAINASSB; GAINASSB/ALGAASSB HETEROSTRUCTURES; IONIZATION COEFFICIENT; IONIZATION COEFFICIENT RATIO; IR WAVELENGTHS; LASER RANGE-FINDING; LONG WAVELENGTH; LONGWAVELENGTH COMMUNICATION; LOW NOISE; MID-INFRARED SPECTRAL RANGE; POTENTIAL APPLICATIONS; POWER LEVELS; SPECTRAL RANGE; WIDE GAP;

ACOUSTIC RECEIVERS; AVALANCHE PHOTODIODES; COMMUNICATION SYSTEMS; CRYSTALS; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION; OPTICAL RECEIVERS; PHOTODIODES; PHOTONICS; PHOTONS; QUANTUM OPTICS; QUANTUM THEORY;

OPTICAL COMMUNICATION;

EID: 70350042185     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.821004     Document Type: Conference Paper

References (30)

1. Stillman, G.E. and Wolfe, C.M., [Semiconductors and Semimetals] 12, Academic Press, (1977).
2. Law, H., Nakano, K. and Tomasetta, L., "III-V alloy heterostructure high speed avalanche photodiodes," IEEE J. Quant. Electr. QE15(7), 549-558 (1979). (Pubitemid 9472612)
3. x alloys," Appl. Phys. Lett. 28(7), 403-405 (1976).
4. Korolkov, V.I., Mikhailova, M.P., Fiz.Tekh.Poluprov., 17, 569-579 (1983).
5. Capasso, F. [Semiconductors and Semimetals] 22D, "Photodetectors, " Academic Press (1985).
6. Chin, R. and Hill, C.M., "Low dark current GaAlAsSb photodiodes, " Appl. Phys. Lett. 40(4), 332-333 (1982).
7. Dianov, E.M., Sov Quant Electr. 7, 453-455 (1980).
8. Alferov, Zh.I., Gorelenok, A.T., Kolyshkin, V.I., Kop'ev, P.S., Tarasov, I.S. and Mdivaki, V.I., Zhurnal Tech Phys. Pisma 4, 1329-1334 (1978).
9. Pearsall, T.P. and Pollack, M.A., [Semicond and Semimetals] 22D, "Photodetectors, " Academic Press (1985).
10. Kanbe, H., Susa, N., Nakagone, H. and Ando, H., "InGaAs avalanche photodiode with InP p-n junction," Electr. Lett. 16(5), 163-165, (1980). (Pubitemid 10476274)
11. McIntyre, R.J., "Multiplication noise in uniform avalanche diodes," IEEE Trans.Electr. Dev. 13(1), 164-168, (1966).
12. Tager, A.S., Sov Phys Solid-State 6, 1919-19221 (1965).
13. Miyashita, T. and Manabe, T., "Infrared optical fibers, " IEEE J. Quantum Electron. QE18 (10), 1432-1450 (1982).
14. Dianov, E.M., Izvestja Vuzov. Radiotechnika 26, 27-31, (1983).
15. Andreev, I.A., Baranov A.N., Voznitskii, M.V., Ermakov, B.A., Mikhailova, M.P., Sirenko, T. N. , and Yakovlev, Yu. P. "Low-noise avalanche photodiodes for recording laser signals in the 1.5-2.5 μm spectral region," Sov.J.Optical Technol 58, 399-401 (1991).
16. Kincade, K., "Free-space-Optics builds invisible bridges," Laser Focus World 39(12), 69-72 (2003).
17. Mikhailova, M.P., Smirnova, N.M., Slobodchikov, S.V. Fiz Tekh Poluprov 10, 860-864 (1976).
18. XSb solid solution," Zh. Tekh. Fiz. Pisma 7, 1487-1489 (1981).
19. Hilderbrandt, O., Kuebart, W. and Pilkuhn, M., "Avalanche multiplication and noise characteristics of low-dark-current GaInAsP/InP avalanche photodetectors," Appl. Phys. Lett. 37(9), 807-810 (1980).
20. Andreev, I.A., Mikahilova, M.P., Mel'nikov, S.V., Smorchkova, Yu.P. and Yakovlev, Yu.P., "Avalanche multiplication and ionization coefficients of GaInAsSb," Sov. Phys. Semicond. 25, 1429-1434 (1991).
21. Mikhailova, M.P., Rogachev, A.A. and Yassievich, I.N., "Impact ionization and Auger recombination in InAs", Fiz. Tekh. Poluprov. 10, 1480-1488 (1976).
22. Zhingarev, M.Z., Korol'kov, V.I., Mikhailova, M.P., Sazonov, V.V. and Tretyakov, D.N., Sov.Phys. Semicond. 14, 801-805 (1980).
23. Hildebrand, O., Kuebart, W., Benz, K.W. and Pilkuhn, M.H., "Ga1-xAlxSb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients," IEEE J. Quantum Electron. QE17(2), 284-288 (1981).
24. Andreev, I.A., Afrailov, M.A., Baranov, A.N., Konnikov, S.G., Mirsagatov, M.A., Mikhailova, M.P., Salata, O.V., Umanskii, V. B., Filaretova, G. M and Yakovlev Yu .P. "Ultrafast GaInAsSb p-i-n photodiode for the spectral interval 1.5-2.3 μm," Sov. Tech. Phys. Lett. 15, 253-254 (1989).
25. Andreev, I.A., Afrailov, M.A., Baranov, A.N., Mirsagatov, M.A., Mikhailova, M.P., and Yakovlev, Yu. P. "Avalanche multiplication in photodiode structures using GaInAsSb solid solutions," Sov. Tech. Phys. Lett. 13, 199-202 (1987).
26. Susa, N., Nakagome, H., Mikamo, O., Ando, H. and Kanbe, H., "New InGaAs/InP avalanche photodiode structure for the 1-1.6 μm wavelength region," IEEE J. Quantum Electron. QE16(8), 864-870, (1980). (Pubitemid 11430043)
27. Ando, H., Yamaguchi, Y., Nakagome, H., Susa, N. and Kanbe, H., "InGaAs/InP separated absorption and multiplication regions avalanche photodiode using liquid- and vapor-phase epitaxies," J.Quantum Electron QE17(2), 250-254 (1981). (Pubitemid 11479764)
28. Andreev, I.A., Afrailov, M.A., Baranov, A.N., Mar'inskaya, N.N., Mirsagatov, M.A., Mikhailova, M.P. and Yakovlev, Yu.P. "Low-noise avalanche photodiodes with separated absorption and multiplication regions for the spectral interval 1.6-2.4 μm," Sov. Tech. Phys. Lett. 15(9), 692-695 (1989).
29. Smith, R.C. and Personick, S.D., "Receiver Design for Optical Fiber Communication Systems," Topics in Applied Physics 39, [Semiconductor devices for Optical Communications], New York: Springer Verlag (1980).
30. Benoit, J., Boulou, M., Soulage, G., Joullie, A. and Mani H., "Performance Evaluation of GaAlAsSb/GaInAsSb SAM-APDs for High Bit Rate Transmissions in the the 2.5 μm Wavelength Region," J.Opt.Commun. 9(2), 55-58 (1988). (Pubitemid 18645244)