Monte Carlo simulations of ion channeling in crystals containing extended defects

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 11-12, 2010, Pages 1718-1722

  Turos, A ^a,b   Nowicki, L ^b   Stonert, A ^b   Pagowska, K ^b   Jagielski, J ^a,b   Muecklich, A ^c  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Extended defects; GaN epitaxial layers; Ion bombardment; Ion channeling; Monte Carlo simulations; Rutherford backscattering

Indexed keywords

EXTENDED DEFECT; GAN EPITAXIAL LAYERS; ION CHANNELING; MONTE CARLO SIMULATION; RUTHERFORD BACK-SCATTERING;

BACKSCATTERING; COMPUTER SIMULATION; COSMIC RAY DETECTORS; CRYSTALS; DEFECTS; DISLOCATIONS (CRYSTALS); FLUIDITY; GALLIUM ALLOYS; GALLIUM NITRIDE; IONS; MONTE CARLO METHODS; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ION BOMBARDMENT;

EID: 77953138103     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.02.046     Document Type: Article

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