Evaluating the doping effect of Fe, Ti and Sn on gas sensing property of ZnO

Sensors and Actuators, B: Chemical

Volumn 147, Issue 2, 2010, Pages 525-530

  Han, Ning ^a,b   Chai, Linyu ^a,b   Wang, Qi ^c   Tian, Yajun ^a   Deng, Pingye ^d   Chen, Yunfa ^a  

^a INSTITUTE OF PROCESS ENGINEERING   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^d BEIJING CENTER FOR PHYSICAL AND CHEMICAL ANALYSIS   (China)

Author keywords

Defects; Dopant; Formaldehyde; Gas sensor; Secondary phase; Zinc oxide

Indexed keywords

BAND GAPS; DOPING EFFECTS; GAS RESPONSE; GAS SENSING PROPERTIES; GAS SENSOR; GAS SENSORS; HYDROTHERMAL METHODS; PURE ZNO; RAMAN SPECTRA; RELATIVE HUMIDITIES; SECONDARY PHASE; SN-DOPED; VIBRATION MODES; ZNO;

ATMOSPHERIC HUMIDITY; CHEMICAL DETECTION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DOPING (ADDITIVES); FORMALDEHYDE; GAS DETECTORS; GAS SENSING ELECTRODES; GASES; RAMAN SPECTROSCOPY; SENSORS; TIN; X RAY DIFFRACTION; ZINC;

ZINC OXIDE;

EID: 77953130658     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2010.03.082     Document Type: Article

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