SHI induced re-crystallization of Ge implanted SiO2 films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 11-12, 2010, Pages 1741-1743

  Rao, N Srinivasa ^a   Pathak, A P ^a   Sathish, N ^a   Devaraju, G ^a   Khan, S A ^b   Saravanan, K ^c   Panigrahi, B K ^c   Nair, K G M ^c   Avasthi, D K ^b  

^a UNIVERSITY OF HYDERABAD   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^c INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

Ion implantation; Ion irradiation; RBS; XRD

Indexed keywords

BASIC MECHANISM; CONCENTRATION OF; CRYSTALLIZATION BEHAVIOR; FLUENCES; GE NANOCRYSTALS; IMPLANTED SAMPLES; ION FLUENCES; ION IRRADIATION; IRRADIATED SAMPLES; MATRIX; NANOCRYSTAL SIZES; RBS; ROOM TEMPERATURE; RUTHERFORD BACKSCATTERING SPECTROMETRY; SILICON SUBSTRATES; SWIFT HEAVY ION IRRADIATION; XRD;

CRYSTALLIZATION; ION IMPLANTATION; IRRADIATION; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS; SILICON OXIDES;

GERMANIUM;

EID: 77953128692     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.02.013     Document Type: Article

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