Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

  Amma, Shin Ichi ^a   Tokumoto, Yuki ^a,b   Edagawa, Keiichi ^c   Shibata, Naoya ^a,d   Mizoguchi, Teruyasu ^a,c   Yamamoto, Takahisa ^a,e   Ikuhara, Yuichi ^a,e,f  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^e JAPAN FINE CERAMICS CENTER   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; ATOMIC FORCE MICROSCOPES; CONTACT MODES; CURRENT FLOWS; ELECTRICAL CURRENT FLOW; FRENKEL-POOLE EMISSION; GAN THIN FILMS; SOLID THIN FILMS; TEMPLATE TECHNIQUE; THREADING DISLOCATION;

CONDUCTIVE FILMS; ELECTRIC CURRENTS; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOWIRES; THIN FILMS;

ELECTRIC WIRE;

EID: 77953001940     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3429604     Document Type: Article

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