Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1-x) mixed crystals (0.25 ≤ x ≤ 1)

Crystal Research and Technology

Volumn 45, Issue 5, 2010, Pages 525-528

  Gasanly, N M ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Layered crystals; Optical band gap; Semiconductors

Indexed keywords

ATOM SUBSTITUTION; EFFECT OF TEMPERATURE; ENERGY BANDGAPS; INDIRECT BAND GAP; LAYERED CRYSTALS; MIXED CRYSTALS; OPTICAL ABSORPTION EDGE; REFLECTION MEASUREMENTS; TEMPERATURE RANGE; TRANSMISSION MEASUREMENTS; WAVELENGTH RANGES; OPTICAL INDIRECT BAND GAPS;

ABSORPTION; CRYSTALS; ENERGY GAP; OPTICAL BAND GAPS; OPTICAL PROPERTIES; SELENIUM; CHEMISTRY; ENGINEERING RESEARCH; SEMICONDUCTOR MATERIALS;

SEMICONDUCTING SELENIUM COMPOUNDS; ENERGY GAP;

EID: 77952998466     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200900653     Document Type: Article

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