Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements

Physica B: Condensed Matter

Volumn 404, Issue 14-15, 2009, Pages 2034-2038

  Guler, I ^a   Gasanly, N M ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Chalcogenides; Defects; Electrical properties; Semiconductors

Indexed keywords

AS-GROWN; CAPTURE CROSS SECTIONS; ELECTRICAL PROPERTIES; EXPERIMENTAL DATA; LIGHT EXCITATION; RETRAPPING; SEMICONDUCTORS; TEMPERATURE RANGE; THERMALLY STIMULATED CURRENT; TRAP LEVELS; TRAPPING CENTERS;

CHALCOGENIDES; CURVE FITTING; ELECTRIC CURRENT MEASUREMENT; ELECTRIC PROPERTIES; PARAMETER ESTIMATION; SEMICONDUCTING SELENIUM COMPOUNDS; THERMOLUMINESCENCE;

SINGLE CRYSTALS;

EID: 67349228747     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.03.035     Document Type: Article

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